12/18/2023 0 Comments Ioff ion significa microeletronica© 2008 Springer Science+Business Media, LLC. It is an important reference for practitioners and students in the field of computer-aided design of integrated circuits. Design for Manufacturability and Statistical Design: A Constructive Approach presents an overview of the methods that need to be mastered for state-of-the-art design for manufacturability and statistical design methodologies. The segments of the book are devoted, respectively, to understanding the causes of variability design of test structures for variability characterization statistically rigorous data analysis techniques of design for manufacturability in lithography and in chemical mechanical polishing statistical simulation, analysis, and optimization techniques for improving parametric yield. The objective of the constructive approach developed in this book is to formulate a consistent set of methods and principles necessary for rigorous statistical design and design for manufacturability from device physics to large-scale circuit optimization. Many end points, each optimally adapted to its particular applicationsĭesign for Manufacturability and Statistical Design: A Constructive Approach provides a thorough treatment of the causes of variability, methods for statistical data characterization, and techniques for modeling, analysis, and optimization of integrated circuits to improve yield. There is no single end point for scaling, but that instead there are Limits for various applications and device types. ![]() As a summary, we provide a table of our estimates of the scaling Low-power portable devices, and moderate and high-performance CMOS Random access memory (DRAM), static random access memory (SRAM), Work out for some of the most important application classes: dynamic Leakage currents arise from application constraints related to powerĬonsumption and circuit functionality. Theĭependence of these leakages on MOSFET geometry and structure isĭiscussed along with design criteria for minimizing short-channelĮffects and other issues related to scaling. Small, and in the thermally generated subthreshold currents. Primarily in the tunneling currents, which leak through the variousīarriers in a MOS field-effect transistor (MOSFET) when it becomes very The ways in which application-related considerations enter into theĭetermination of these limits. Metal-oxide-semiconductor (CMOS) technology and provides an analysis of ![]() ![]() This paper presents the current state of understanding of theįactors that limit the continued scaling of Si complementary
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